| HCTS20MS Description | | NAND-Gate, 4-Input, TTL Inputs, Dual, Rad-Hard, High-Speed, CMOS, Logic | | HCTS20MS Vendor | | Intersil | | HCTS20MS Categories | | | HCTS20MS Features | - 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity -9Errors/Bit-Day (Typ)
- Dose Rate Survivability: >1 x 1012RAD (Si)/s
- Dose Rate Upset >1010RAD (Si)/s 20ns Pulse
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55oC to +125oC
- Significant Power Reduction Compared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
- Input Current Levels Ii ≤ 5�A at VOL, VOH
| | HCTS20MS Datasheet and Application Notes | |
|