HCTS32MS

HCTS32MS Manufacturer

HCTS32MS Description

HCTS32MS Categories

HCTS32MS Datasheet (PDF)

HCTS32MS Price & Availability

HCTS32MS Features

• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm^2/mg
• ^{Single Event Upset (SEU) Immunity -9Errors/Bit-Day (Typ)}
• ^{Dose Rate Survivability: >1 x 1012RAD (Si)/s}
• ^{Dose Rate Upset >1010RAD (Si)/s 20ns Pulse}
• ^{Latch-Up Free Under Any Conditions}
• ^{Military Temperature Range: -55oC to +125oC}
• ^{Significant Power Reduction Compared to LSTTL ICs}
• ^{DC Operating Voltage Range: 4.5V to 5.5V}
• ^{LSTTL Input Compatibility}
  • ^{VIL = 0.8V Max}
  • ^{VIH = VCC/2 Min}
• ^{Input Current Levels Ii ? 5?A @ VOL, VOH}