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HFA3096 Datasheet

HFA3096 ManufacturerIntersil
HFA3096 DescriptionTransistors, Array, 3 NPN, 2 PNP, Ultra High Frequency
HFA3096 DescriptionUltra High Frequency Transistor Arrays
HFA3096 Categories
Transistor Arrays
PNP/ NPN Transistor Arrays
Transistors
HFA3096 Datasheet (PDF)
Digital Control Selects The Number of Analog Cycles and Burst Frequency
RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays
RF Up/Down Conversion Is Simplified By Linear Arrays
HFA3096 Datasheet
Ultra High Frequency Transistor Arrays
HFA3096 Features
  • NPN Transistor (fT) 8GHz
  • NPN Current Gain (hFE) 130
  • NPN Early Voltage (VA) 50V
  • PNP Transistor (fT) 5.5GHz
  • PNP Current Gain (hFE) 60
  • PNP Early Voltage (VA) 20V
  • Noise Figure (50?) at 1.0GHz 3.5dB
  • Collector to Collector Leakage <1pA
  • Complete Isolation Between Transistors
  • Pin Compatible with Industry Standard 3XXX Series Arrays
HFA3096 Features
  • NPN Transistor (fT) 8GHz
  • NPN Current Gain (hFE) 130
  • NPN Early Voltage (VA) 50V
  • PNP Transistor (fT) 5.5GHz
  • PNP Current Gain (hFE) 60
  • PNP Early Voltage (VA) 20V
  • Noise Figure (50Ω) at 1.0GHz 3.5dB
  • Collector to Collector Leakage <1pA
  • Complete Isolation Between Transistors
  • Pin Compatible with Industry Standard 3XXX Series Arrays
  • Pb-Free Plus Anneal Available (RoHS Compliant)
HFA3096 Description

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.

Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com.

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