HFA3096BZ Manufacturer
HFA3096BZ DescriptionHFA3096BZ DescriptionHFA3096BZ DescriptionHFA3096BZ Categories
HFA3096BZ Datasheet (PDF)
HFA3096BZ Price & Availability
HFA3096BZ Features
-
NPN Transistor (fT) 8GHz
-
NPN Current Gain (hFE) 130
-
NPN Early Voltage (VA) 50V
-
PNP Transistor (fT) 5.5GHz
-
PNP Current Gain (hFE) 60
-
PNP Early Voltage (VA) 20V
-
Noise Figure (50Ω) at 1.0GHz 3.5dB
-
Collector to Collector Leakage <1pA
-
Complete Isolation Between Transistors
-
Pin Compatible with Industry Standard 3XXX Series Arrays
-
Pb-Free Plus Anneal Available (RoHS Compliant)
HFA3096BZ Description
The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.
The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com. HFA3096BZ Parameters
Products Similar to HFA3096BZ
Keywords
| HFA3096BZ Data Sheet |
HFA3096BZ Spec |
HFA3096BZ Application Notes |
HFA3096BZ Distributor |
| HFA3096BZ Circuit |
HFA3096BZ Reference |
HFA3096BZ PDF |
HFA3096BZ RoHS |
|