HFA3127

HFA3127 Manufacturer

HFA3127 Description

HFA3127 Description

HFA3127 Categories

HFA3127 Datasheet (PDF)

HFA3127 Price & Availability

HFA3127 Features

• NPN Transistor (fT) 8GHz
• NPN Current Gain (hFE) 130
• NPN Early Voltage (VA) 50V
• PNP Transistor (fT) 5.5GHz
• PNP Current Gain (hFE) 60
• PNP Early Voltage (VA) 20V
• Noise Figure (50?) at 1.0GHz 3.5dB
• Collector to Collector Leakage <1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series Arrays

HFA3127 Features

• NPN Transistor (f_T) 8GHz
• NPN Current Gain (h_FE) 130
• NPN Early Voltage (V_A) 50V
• PNP Transistor (f_T) 5.5GHz
• PNP Current Gain (h_FE) 60
• PNP Early Voltage (V_A) 20V
• Noise Figure (50Ω) at 1.0GHz 3.5dB
• Collector to Collector Leakage <1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series Arrays
• Pb-Free Plus Anneal Available (RoHS Compliant)

HFA3127 Description

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a f_T of 8GHz while the PNP transistors provide a f_T of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.

Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com.

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