HIP6602B

HIP6602B Manufacturer

HIP6602B Description

HIP6602B Description

HIP6602B Categories

HIP6602B Datasheet (PDF)

HIP6602B Price & Availability

HIP6602B Features

• Drives Four N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Devices
• Supports High Switching Frequency
  • Fast Output Rise Time
  • Propagation Delay 30ns
• Small 14-Lead SOIC Package
• Smaller 16-Lead QFN Thermally Enhanced Package
• 5V to 12V Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Bridge Shutdown
• Supply Undervoltage Protection
• Lead-Free Product Now Available (SO8)
• QFN Package:
  • Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
  • Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile

HIP6602B Features

• Drives Four N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Devices
• Supports High Switching Frequency
  • Fast Output Rise Time
  • Propagation Delay 30ns
• Small 14-Lead SOIC Package
• Smaller 16-Lead QFN Thermally Enhanced Package
• 5V to 12V Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Bridge Shutdown
• Supply Undervoltage Protection
• Pb-Free Plus Anneal Available (RoHS Compliant)
• QFN Package:
  • Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
  • Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile

HIP6602B Description

The HIP6602B is a high frequency, two power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous rectified buck converter topology. This device is available in either a 14-lead SOIC or a 16-lead QFN package with a PAD to thermally enhance the package. These drivers combined with a HIP63xx or ISL65xx series of Multiphase Buck PWM controllers and MOSFETs form a complete core voltage regulator solution for advanced microprocessors.

The HIP6602B drives both upper and lower gates over a range of 5V to 12V. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses.

The output drivers in the HIP6602B have the capacity to efficiently switch power MOSFETs at high frequencies. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. This device implements bootstrapping on the upper gates with a single external capacitor and resistor required for each power channel. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.