HS-302RH

HS-302RH Manufacturer

HS-302RH Description

HS-302RH Description

HS-302RH Categories

HS-302RH Datasheet (PDF)

HS-302RH Price & Availability

HS-302RH Features

• QML Class T, Per MIL-PRF-38535
• Radiation Performance
  • Gamma Dose 1 x 10⁵RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-302 Series Analog Switches
• Analog Signal Range 15V
• Low Leakage 100nA (Max, Post Rad)
• Low RON 60? (Max, Post Rad)
• Low Operating Power 100?A (Max, Post Rad)

HS-302RH Features

• QML Class T, Per MIL-PRF-38535
• Radiation Performance
  • Gamma Dose 1 x 10⁵ RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-302 Series Analog Switches
• Analog Signal Range 15V
• Low Leakage 100nA (Max, Post Rad)
• Low RON 60Ω (Max, Post Rad)
• Low Operating Power 100ľA (Max, Post Rad)

HS-302RH Description

Intersil's Satellite Applications Flow? (SAF) devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability.

The HS-302RH-T analog switch is a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free operation. Improved total dose hardness is obtained by layout (thin oxide tabs extending to a channel stop) and processing (hardened gate oxide). These switches offer lowresistance switching performance for analog voltages up to the supply rails. "ON" resistance is low and stays reasonably constant over the full range of operating voltage and current. "ON" resistance also stays reasonably constant when exposed to radiation, being typically 30Ω pre-rad and 35Ω post 100kRAD(Si). This device provide break-before-make switching.