ISL73127RHVF

ISL73127RHVF Description

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ISL73127RHVF Manufacturer

ISL73127RHVF Datasheet (PDF)

ISL73127RHVF Price & Availability

ISL73127RHVF Features

• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
  • Gamma Dose (γ) 3 x 10⁵RAD(Si)
  • SEL Immune Bonded Wafer Dielectric Isolation
• NPN Gain Bandwidth Product (F_T) 8GHz (Typ)
• NPN Current Gain (h_FE) 130 (Typ)
• NPN Early Voltage (V_A) 50V (Typ)
• PNP Gain Bandwidth Product (F_T) 5.5GHz (Typ)
• PNP Current Gain (h_FE) 60 (Typ)
• PNP Early Voltage (V_A) 20V (Typ)
• Noise Figure (50Ω) at 1GHz 3.5dB (Typ)
• Collector-to-Collector Leakage <1pA (Typ)
• Complete Isolation Between Transistor

ISL73127RHVF Description

The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127RH consists of five NPN transistors on a common substrate. The ISL73128RH consists of five PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.

The high gain-bandwidth product and low noise figure of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the NPN and PNP transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility.

Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering.

Detailed Electrical Specifications for these devices are contained in SMD 5962-07218. A "hot-link" is provided on our website for downloading.

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