| DS1220AB Description |
| 16k Nonvolatile SRAM |
| DS1220AB Vendor |
| Maxim |
| DS1220AB Categories |
|
| DS1220AB Features |
| 10 years minimum data retention in the absence of external powerData is automatically protected during power lossDirectly replaces 2k x 8 volatile static RAM or EEPROMUnlimited write cyclesLow-power CMOSJEDEC standard 24-pin DIP packageRead and write access times as fast as 100nsLithium energy source is electrically disconnected to retain freshness until power is applied for the first timeFull ±10% VCCoperating range (DS1220AD)Optional ±5% VCCoperating range (DS1220AB)Optional industrial temperature range of -40°C to +85°C, designated IND |
| DS1220AB Datasheet and Application Notes |
|
| Parameter | Value |
| Memory Type | NV SRAM |
| Memory Size | 2k x 8 |
| Bus Type | Parallel |
| Supply Voltage (V) | 4.75 to 5.25 |
| DIP with Internal Battery | Yes |
| Op. Range (°C) | -40 to +85 |
| Op. Range (°C) | 0 to +70 |
| Package | 24/EDIP.72 |
| Products related to DS1220AB |
| DS1220AD |