| DS1258AB Description |
| 128k x 16 Nonvolatile SRAM |
| DS1258AB Vendor |
| Maxim |
| DS1258AB Categories |
|
| DS1258AB Features |
| 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte Chip-Select Inputs Unlimited Write Cycles Low-Power CMOS Read and Write Access Times as Fast as 70ns Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time Full ±10% Operating Range (DS1258Y) Optional ±5% Operating Range (DS1258AB) Optional Industrial Temperature Range of -40°C to +85°C, Designated IND |
| DS1258AB Datasheet and Application Notes |
|
| Parameter | Value |
| Memory Type | NV SRAM |
| Memory Size | 128k x 16 |
| Bus Type | Parallel |
| Supply Voltage (V) | 4.75 to 5.25 |
| DIP with Internal Battery | Yes |
| Op. Range (°C) | -40 to +85 |
| Op. Range (°C) | 0 to +70 |
| Package | 40/EDIP.74 |
| Products related to DS1258AB |
| DS1258Y |