| DS1258AB Manufacturer | Maxim |
| DS1258AB Description | 128k x 16 Nonvolatile SRAM |
| DS1258AB Categories | |
| DS1258AB Datasheet (PDF) | |
| DS1258AB Features | - 10-Year Minimum Data Retention in the Absence of External Power
- Data is Automatically Protected During a Power Loss
- Separate Upper Byte and Lower Byte Chip-Select Inputs
- Unlimited Write Cycles
- Low-Power CMOS
- Read and Write Access Times as Fast as 70ns
- Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time
- Full ±10% Operating Range (DS1258Y)
- Optional ±5% Operating Range (DS1258AB)
- Optional Industrial Temperature Range of -40°C to +85°C, Designated IND
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| DS1258AB Parameters | | Package | 40/EDIP.74 | | Memory Type | NV SRAM | | Supply Voltage (V) | 4.75 to 5.25 | | Memory Size | 128K x 16 | | Op. Range (°C) | -40 to +85 | | Op. Range (°C) | 0 to +70 | | Bus Type | Parallel | | DIP with Internal Battery | Yes |
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| Related or Similar Components | DS1258Y |