| DS1265Y Description |
| 8M Nonvolatile SRAM |
| DS1265Y Vendor |
| Maxim |
| DS1265Y Categories |
|
| DS1265Y Features |
| 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Full ±10% VCCoperating range (DS1265Y) Optional ±5% VCCoperating range (DS1265AB) Optional industrial temperature range of -40°C to +85°C, designated IND |
| DS1265Y Datasheet and Application Notes |
|
| Parameter | Value |
| Memory Type | NV SRAM |
| Memory Size | 1M x 8 |
| Bus Type | Parallel |
| Supply Voltage (V) | 4.5 to 5.5 |
| DIP with Internal Battery | Yes |
| Op. Range (°C) | -40 to +85 |
| Op. Range (°C) | 0 to +70 |
| Package | 36/EDIP.740 |
| Products related to DS1265Y |
| DS1265AB |