| DS1270AB Description |
| 16M Nonvolatile SRAM |
| DS1270AB Vendor |
| Maxim |
| DS1270AB Categories |
|
| DS1270AB Features |
| 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Full ±10% VCCoperating range (DS1270Y) Optional ±5% VCCoperating range (DS1270AB) Optional industrial temperature range of -40°C to +85°C, designated IND |
| DS1270AB Datasheet and Application Notes |
|
| Parameter | Value |
| Memory Type | NV SRAM |
| Memory Size | 2M x 8 |
| Bus Type | Parallel |
| Supply Voltage (V) | 4.75 to 5.25 |
| DIP with Internal Battery | Yes |
| Op. Range (°C) | -40 to +85 |
| Op. Range (°C) | 0 to +70 |
| Package | 36/EDIP.740 |
| Products related to DS1270AB |
| DS1270Y |