DS3832C-311 Manufacturer
DS3832C-311 DescriptionDS3832C-311 Categories
DS3832C-311 Datasheet (PDF)
DS3832C-311 Price & Availability
DS3832C-311 Features- 3.0V to 3.6V operation
- Surface-mount nonvolatile (NV) RAM ball-grid array (BGA) module construction
- 1024k x 32 NV SRAM memory space and separate 64 x 8 real-time clock (RTC) memory space
- RTC maintains hundredths of seconds, seconds, minutes, hours, day, date, month, and year with leap-year compensation valid up to 2100
- Removable backup power source provides more than eight years of timekeeping and data retention
- Read and write access times as fast as 100ns for NV SRAM memory and 200ns for RTC
- Automatic data protection during power loss
- Unlimited write-cycle endurance
- Low-power CMOS operation
- Battery monitor checks remaining capacity daily
- Industrial temperature range of -40°C to +85°C
DS3832C-311 Parameters
Keywords
| DS3832C-311 Data Sheet |
DS3832C-311 Spec |
DS3832C-311 Application Notes |
DS3832C-311 Distributor |
| DS3832C-311 Circuit |
DS3832C-311 Reference |
DS3832C-311 PDF |
DS3832C-311 RoHS |
|