MHW1224

MHW1224 Description

MHW1224 Description

MHW1224 Categories

MHW1224 Manufacturer

MHW1224 Datasheet (PDF)

MHW1224 Price & Availability

MHW1224 Features

• Guaranteed Broadband Power Gain @ f = 5.0?200 MHz

  Power Gain @ 10 MHz (V_CC= 24 Vdc, T_C= +30°C,
  
  75 Wsystem): 13.0 ± 0.5 dB

• Guaranteed Broadband Noise Figure @ f = 5.0?175 MHz

  7.0 dB Max (V_CC= 24 Vdc, T_C= +30°C, 75 Wsystem)

• Superior Gain, Return Loss and DC Current Stability with Temperature
• All Gold Metallization
• All Ion?Implanted Arsenic Emitter Transistor Chips with 6.0 GHz f_T's
• Circuit Design Optimized for Good RF Stability Under High VSWR Load Conditions
• Transformers Designed to Insure Good Low Frequency Gain Stability versus Temperature

MHW1224 Parameters