54F219DLQB
54F219DLQB Description
64-Bit Random Access Memory with TRI-STATE Outputs
54F219DLQB Vendor
National Semiconductor
54F219DLQB Features
  • TRI-STATE outputs for data bus applications
  • Buffered inputs minimize loading
  • Address decoding on-chip
  • Diode clamped inputs minimize ringing
  • Available in SOIC (300 mil only)
54F219DLQB Description

    The 'F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are TRI-STATE and are in the high-impedance state whenever the Chip Select (CS#) input is HIGH. The outputs are active only in the Read mode. This device is similar to the 'F189 but features non-inverting, rather than inverting, data outputs.

54F219DLQB Datasheet and Application Notes
ParameterValue
Temperature Min (deg C)-55
Temperature Max (deg C)125
PackageCERDIP
Pins16
StatusFull production
Pricing$18.80
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