LF198AH | ||||||||
LF198AH DescriptionLF198AH ManufacturerLF198AH Datasheet (PDF)LF198AH Price & AvailabilityLF198AH Features
LF198AH DescriptionThe LF198/LF298/LF398 are monolithic sample-and-hold circuits which utilize BI-FET technology to obtain ultra-high dc accuracy with fast acquisition of signal and low droop rate. Operating as a unity gain follower, dc gain accuracy is 0.002% typical and acquisition time is as low as 6 µs to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth. Input offset adjust is accomplished with a single pin, and does not degrade input offset drift. The wide bandwidth allows the LF198 to be included inside the feedback loop of 1 MHz op amps without having stability problems. Input impedance of 1010Ohm allows high source impedances to be used without degrading accuracy. P-channel junction FET's are combined with bipolar devices in the output amplifier to give droop rates as low as 5 mV/min with a 1 µF hold capacitor. The JFET's have much lower noise than MOS devices used in previous designs and do not exhibit high temperature instabilities. The overall design guarantees no feed-through from input to output in the hold mode, even for input signals equal to the supply voltages. LF198AH ParametersProducts Similar to LF198AHOther Components M3DEK-1020K P51-2000-S-AD-I12-4.5V ECW-U2472V16 1734098-5 LM336BZ Keywords
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