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MJD112-001

MJD112-001 Description

Power 2A 100V Darlington NPN

MJD112-001 Description

Darlington Transistor NPN 2A 100V STR DPAK

MJD112-001 Categories

NPN Darlington Transistors

MJD112-001 Manufacturer

ON Semiconductor

MJD112-001 Datasheet (PDF)

MJD112-001 Datasheet
MJD112,117

MJD112-001 Price & Availability


Check MJD112-001 Price & Availability at Canics

MJD112-001 Parameters

PackageDPAK
PolarityNPN
PackingRAIL
fT Min (MHz)25
hFE Max (k)12
hFE Min (k)1
IC Max (mA)2000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
Power - Max1.75W
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Frequency - Transition25MHz
Current - Collector Cutoff (Max)20µA
Select parameters and click to see components with these parameters.

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MJD112, MJD112RL, MJD112T4, MJD117, MJD117-001

 
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