MJE18004D2
MJE18004D2 Description
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
MJE18004D2 Vendor
ON Semiconductor
MJE18004D2 Datasheet and Application Notes
ParameterValue
PolarityNPN
PTM Max (W)75
VCEO(sus) Min (V)450
PackageTO220
PackingRail
IC Max (A)5
hFE Min6
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