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MTB30P06VT4G

MTB30P06VT4G Manufacturer

ON Semiconductor

MTB30P06VT4G Description

Power MOSFET 30 Amps, 60 Volts

MTB30P06VT4G Description

MOSFET P-CH 60V 30A D2PAK

MTB30P06VT4G Description

P CHANNEL MOSFET, -60V, 30A, D2-PAK

MTB30P06VT4G Categories

MOSFET Transistors

MTB30P06VT4G Datasheet (PDF)

MTB30P06VT4G Datasheet
MTB30P06VT4G Datasheet
MTB30P06V
MTB30P06VT4G Datasheet

MTB30P06VT4G Price & Availability


Check MTB30P06VT4G Price & Availability at Canics

MTB30P06VT4G Parameters

PackageD2PAK
PackingTape and Reel
PackingRAIL
Channel PolarityP Channel
PD Max (W)125.0
ID Max (A)30.0
V(BR)DSS Min (V)60.0
rDS(on) Max (m?)80
CategoryDiscrete Semiconductor Products
FamilyMOSFETs, GaNFETs - Single
FET TypeMOSFET P-Channel, Metal Oxide
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
Power - Max3W
FET FeatureStandard
Rds On (Max) @ Id, Vgs80 mOhm @ 15A, 10V
Drain to Source Voltage (Vdss)60V
Vgs(th) (Max) @ Id4V @ 250µA
Current - Continuous Drain (Id) @ 25° C30A
Input Capacitance (Ciss) @ Vds 2190pF @ 25V
Gate Charge (Qg) @ Vgs80nC @ 10V
Power Dissipation Pd125W
Continuous Drain Current Id30A
Drain Source Voltage Vds60V
On Resistance Rds(on)80mohm
RoHS CompliantYes
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ2.6V
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Products Similar to MTB30P06VT4G

BCP56, BCP56-10T1, BCP56-16T1, BCP56-16T3, BCP56T1

 
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