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NTJD2152PT1G

NTJD2152PT1G Description

Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection

NTJD2152PT1G Description

MOSFET 2P-CH 8V 775MA SOT-363

NTJD2152PT1G Categories

ESD Protection

NTJD2152PT1G Manufacturer

ON Semiconductor

NTJD2152PT1G Datasheet (PDF)

NTJD2152PT1G Datasheet
NTJD2152P-D

NTJD2152PT1G Price & Availability


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NTJD2152PT1G Parameters

PackageSC88
PackingTape and Reel
Channel PolarityP Channel
PD Max (W)0.27
ID Max (A)0.775
V(BR)DSS Min (V)8.0
rDS(on) Max (m?)300
CategoryDiscrete Semiconductor Products
FamilyMOSFETs - Arrays
FET Type2 P-Channel (Dual)
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Power - Max270mW
FET FeatureLogic Level Gate
Rds On (Max) @ Id, Vgs300 mOhm @ 570mA, 4.5V
Drain to Source Voltage (Vdss)8V
Vgs(th) (Max) @ Id1V @ 250µA
Current - Continuous Drain (Id) @ 25° C775mA
Input Capacitance (Ciss) @ Vds 225pF @ 8V
Gate Charge (Qg) @ Vgs4nC @ 4.5V
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