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BD676G

BD676G Description

Darlington Transistor PNP 45V 4A BIPO TO225

BD676G Description

DARLINGTON TRANSISTOR, PNP, -45V, TO-225

BD676G Description

DARLINGTON TRANSISTOR, TO-126

BD676G Categories

PNP Darlington Transistors

BD676G Manufacturer

ON Semiconductor

BD676G Datasheet (PDF)

BD676(A), 78(A), 80(A), 82(T)
BD676G Datasheet

BD676G Price & Availability


Check BD676G Price & Availability at Canics

BD676G Parameters

Operating Temperature Range-55°C to +150°C
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeThrough Hole
Package / CaseTO-225-3
Power - Max40W
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Current - Collector Cutoff (Max)500µA
Transistor PolarityPNP
DC Collector Current4A
Collector Emitter Voltage V(br)ceo45V
Power Dissipation Pd40W
Transition Frequency Typ ft200MHz
RoHS CompliantYes
DC Current Gain hFE750
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Keywords
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BD676G Circuit BD676G Reference BD676G PDF BD676G RoHS