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MJD112-1G

MJD112-1G Description

Darlington Transistor NPN 2A 100V STR DPAK

MJD112-1G Categories

NPN Darlington Transistors

MJD112-1G Manufacturer

ON Semiconductor

MJD112-1G Datasheet (PDF)

MJD112,117

MJD112-1G Price & Availability


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MJD112-1G Parameters

CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
Power - Max1.75W
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Frequency - Transition25MHz
Current - Collector Cutoff (Max)20µA
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Products Similar to MJD112-1G

MJD112-001, MJD112T4, MJD117T4, MJD117T4G, MJD112T4G

 
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