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MJD112G

MJD112G Description

Darlington Transistor NPN 2A 100V DPAK

MJD112G Categories

NPN Darlington Transistors

MJD112G Manufacturer

ON Semiconductor

MJD112G Datasheet (PDF)

MJD112,117

MJD112G Price & Availability


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MJD112G Parameters

CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
Power - Max1.75W
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Frequency - Transition25MHz
Current - Collector Cutoff (Max)20µA
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MJD112-001, MJD112T4, MJD117T4, MJD117T4G, MJD112T4G

 
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