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MJD122G

MJD122G Description

Darlington Transistor NPN 8A 100V DPAK

MJD122G Description

BIPOLAR TRANSISTOR, NPN, 100V

MJD122G Categories

NPN Darlington Transistors

MJD122G Manufacturer

ON Semiconductor

MJD122G Datasheet (PDF)

MJD122,127
MJD122G Datasheet

MJD122G Price & Availability


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MJD122G Parameters

Operating Temperature Range-65°C to +150°C
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
Power - Max1.75W
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)8A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Frequency - Transition4MHz
Current - Collector Cutoff (Max)10µA
No. of Pins3
Transistor PolarityNPN
DC Collector Current8A
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd1.75W
RoHS CompliantYes
DC Current Gain hFE12
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Keywords
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