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MJD127G

MJD127G Description

Darlington Transistor PNP 8A 100V DPAK

MJD127G Description

BIPOLAR TRANSISTOR, PNP, -100V

MJD127G Categories

PNP Darlington Transistors

MJD127G Manufacturer

ON Semiconductor

MJD127G Datasheet (PDF)

MJD122,127
MJD127G Datasheet

MJD127G Price & Availability


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MJD127G Parameters

Operating Temperature Range-65°C to +150°C
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
Power - Max1.75W
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)8A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Frequency - Transition4MHz
Current - Collector Cutoff (Max)10µA
No. of Pins4
Transistor PolarityPNP
DC Collector Current8A
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd1.75W
RoHS CompliantYes
DC Current Gain hFE12
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Keywords
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MJD127G Circuit MJD127G Reference MJD127G PDF MJD127G RoHS