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MJD6039T4G

MJD6039T4G Description

Darlington Transistor NPN 4A 80V DPAK

MJD6039T4G Description

BIPOLAR TRANSISTOR, NPN, 80V

MJD6039T4G Categories

NPN Darlington Transistors

MJD6039T4G Manufacturer

ON Semiconductor

MJD6039T4G Datasheet (PDF)

MJD6039
MJD6039T4G Datasheet

MJD6039T4G Price & Availability


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MJD6039T4G Parameters

Operating Temperature Range-65°C to +150°C
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
Power - Max1.75W
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 2A, 4V
Current - Collector Cutoff (Max)10µA
No. of Pins3
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Power Dissipation Pd20W
RoHS CompliantYes
Continuous Collector Current Ic4A
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Keywords
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MJD6039T4G Circuit MJD6039T4G Reference MJD6039T4G PDF MJD6039T4G RoHS