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NJD35N04T4G

NJD35N04T4G Description

Darlington Transistor NPN 4A 350V DPAK

NJD35N04T4G Description

BIPOLAR TRANSISTOR, NPN, 350V

NJD35N04T4G Categories

NPN Darlington Transistors

NJD35N04T4G Manufacturer

ON Semiconductor

NJD35N04T4G Datasheet (PDF)

NJD35N04
NJD35N04T4G Datasheet

NJD35N04T4G Price & Availability


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NJD35N04T4G Parameters

Operating Temperature Range-65°C to +150°C
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
Power - Max45W
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1.5V @ 20mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 2A, 2V
Frequency - Transition90MHz
Current - Collector Cutoff (Max)50µA
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo350V
Power Dissipation Pd45W
Transition Frequency Typ ft90MHz
RoHS CompliantYes
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