| 2N2102 Description |
| EPITAXIAL PLANAR NPN |
| 2N2102 Vendor |
| STMicroelectronics |
| 2N2102 Datasheet and Application Notes |
|
| Parameter | Value |
| Package | TO39 3 |
| Lead Free | Leaded |
| Polarity | NPN |
| Total Power Dissipation (PD) - typ | 1 |
| Collector Current (IC_DC) - nom | 1 |
| Collector-Emitter Voltage - max | 65 |
| Lifecycle: Stage | Maturity |
| Collector-Base Voltage (Vcbo) - max | 120 |
| Dc Current Gain (hFE) - min | 40 |
| Dc Current Gain (hFE) - max | 120 |
| HFE test condition | Ic=150mA Vce=10V |
| Collector-Emitter Saturation Voltage (Vce(sat)) - max | .5 |
| VCE(sat) test condition | Ic=150mA Ib=15mA |
| Lifecycle: Date | 2003-10-03 |
| Moisture Sensitivity | Not Applicable |
| Mounting | Hardware |
| Pin Count - nom | 3 |