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2N2907A

2N2907A Description

SMALL SIGNAL PNP TRANSISTORS

2N2907A Description

TRANSISTOR PNP -60V -0.6A TO-18

2N2907A Description

BIPOLAR TRANSISTOR, PNP, -60V TO-18

2N2907A Description

PNP Silicon Epitaxial Planar Transistor 60V

2N2907A Categories

Transistors

2N2907A Manufacturer

STMicroelectronics

2N2907A Datasheet (PDF)

2N2907A Datasheet
2N2905A/07A
2N2907A Datasheet

2N2907A Price & Availability


Check 2N2907A Price & Availability at Canics

2N2907A Parameters

PackageTO18 3
PolarityPNP
Lead FreeConverted
Lifecycle: StageMaturity
MountingHardware
Moisture SensitivityNot Applicable
Lifecycle: Date2003-10-03
Pin Count - nom3
Total Power Dissipation (PD) - typ.4
Collector Current (IC_DC) - nom.6
Collector-Emitter Voltage - max60
Collector-Base Voltage (Vcbo) - max60
Dc Current Gain (hFE) - min40
Dc Current Gain (hFE) - max120
HFE test conditionIc=150mA Vce=10V
Collector-Emitter Saturation Voltage (Vce(sat)) - max1.6
VCE(sat) test conditionIc=500mA Ib=50mA
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeThrough Hole
Package / CaseTO-18-3, TO-206AA, Metal Case
Power - Max400mW
Transistor TypePNP
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition200MHz
No. of Pins3
Transistor PolarityPNP
DC Collector Current-600mA
Collector Emitter Voltage V(br)ceo60V
Power Dissipation Pd400mW
Transition Frequency Typ ft200MHz
RoHS CompliantYes
DC Current Gain hFE300
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Keywords
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2N2907A Circuit 2N2907A Reference 2N2907A PDF 2N2907A RoHS