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74ALVTH16373ZQLR

74ALVTH16373ZQLR Description

74ALVTH16373ZQLR Description

74ALVTH16373ZQLR Categories

74ALVTH16373ZQLR Manufacturer

74ALVTH16373ZQLR Datasheet (PDF)

74ALVTH16373ZQLR Price & Availability


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74ALVTH16373ZQLR Features

  • State-of-the-Art Advanced BiCMOS Technology (ABT) WidebusTM Design for 2.5-V and 3.3-V Operation and Low Static Power Dissipation
  • Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 2.3-V to 3.6-V VCC)
  • Typical VOLP (Output Ground Bounce) < 0.8 V at VCC = 3.3 V, TA = 25°C
  • High Drive (-24/24 mA at 2.5-V and -32/64 mA at 3.3-V VCC)
  • Power Off Disables Outputs, Permitting Live Insertion
  • High-Impedance State During Power Up and Power Down Prevents Driver Conflict
  • Uses Bus Hold on Data Inputs in Place of External Pullup/Pulldown Resistors to Prevent the Bus From Floating
  • Auto3-State Eliminates Bus Current Loading When Output Exceeds VCC + 0.5 V
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model; and Exceeds 1000 V Using Charged-Device Model, Robotic Method
  • Flow-Through Architecture Facilitates Printed Circuit Board Layout
  • Distributed VCC and GND Pin Configuration Minimizes High-Speed Switching Noise
  • Package Options Include Plastic Shrink Small-Outline (DL), Thin Shrink Small-Outline (DGG), Thin Very Small-Outline (DGV) Packages, and 380-mil Fine-Pitch Ceramic Flat (WD) Package

74ALVTH16373ZQLR Parameters

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