74ALVTH16373ZQLR Description74ALVTH16373ZQLR Description74ALVTH16373ZQLR Categories74ALVTH16373ZQLR Manufacturer
74ALVTH16373ZQLR Datasheet (PDF)
74ALVTH16373ZQLR Price & Availability
74ALVTH16373ZQLR Features- State-of-the-Art Advanced BiCMOS Technology (ABT) WidebusTM Design for 2.5-V and 3.3-V Operation and Low Static Power Dissipation
- Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 2.3-V to 3.6-V VCC)
- Typical VOLP (Output Ground Bounce) < 0.8 V at VCC = 3.3 V, TA = 25°C
- High Drive (-24/24 mA at 2.5-V and -32/64 mA at 3.3-V VCC)
- Power Off Disables Outputs, Permitting Live Insertion
- High-Impedance State During Power Up and Power Down Prevents Driver Conflict
- Uses Bus Hold on Data Inputs in Place of External Pullup/Pulldown Resistors to Prevent the Bus From Floating
- Auto3-State Eliminates Bus Current Loading When Output Exceeds VCC + 0.5 V
- Latch-Up Performance Exceeds 250 mA Per JESD 17
- ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model; and Exceeds 1000 V Using Charged-Device Model, Robotic Method
- Flow-Through Architecture Facilitates Printed Circuit Board Layout
- Distributed VCC and GND Pin Configuration Minimizes High-Speed Switching Noise
- Package Options Include Plastic Shrink Small-Outline (DL), Thin Shrink Small-Outline (DGG), Thin Very Small-Outline (DGV) Packages, and 380-mil Fine-Pitch Ceramic Flat (WD) Package
74ALVTH16373ZQLR Parameters
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