| BQ4013YMA-70 Description |
| 128Kx8 Nonvolatile SRAM, 10% Voltage Tolerance |
| BQ4013YMA-70 Vendor |
| Texas Instruments |
| BQ4013YMA-70 Features |
- Data retention for at least 10 years without power
- Automatic write-protection during power-up/power-down cycles
- Conventional SRAM operation, including unlimited write cycles
- Internal isolation of battery before power application
- Industry standard 32-pin DIP pinout
- 34-pin LIFETIME LITHIUMTM module
- Module completely surface-mounted
- Snap-on power-source for lithium battery backup
- Replaceable power-source (part number: bq40MS)
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| BQ4013YMA-70 Datasheet and Application Notes |
|
| Parameter | Value |
| Supply Voltage (V) | 5 |
| Memory Density (Kb) | 1024 |
| Approx. 1KU Price (US$) | 9.5 |
| Status | ACTIVE |
| Temp (oC) | 0 to 70 |
| Budget Price ($US) | QTY | 9.50 | 1KU |
| Package Type | Pins | DIP MODULE (MA) | 0 |
| STD Pack QTY | 1 |
| Products related to BQ4013YMA-70 |
BQ4013MA-120 BQ4013YMA-85 BQ4013YMA-120 BQ4013
BQ4013YMA-70N BQ4013Y BQ4013YMA-85N BQ4013MA-85
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