| BQ4016YMC-70 Description |
| 1024Kx8 Nonvolatile SRAM, 10% Voltage Tolerance |
| BQ4016YMC-70 Vendor |
| Texas Instruments |
| BQ4016YMC-70 Features |
- Data retention in the absence of power
- Automatic write-protection during power-up/power-down cycles
- Conventional SRAM operation; unlimited write cycles
- 10-year minimum data retention in absence of power
- Battery internally isolated until power is applied
|
| BQ4016YMC-70 Datasheet and Application Notes |
|
| Parameter | Value |
| Supply Voltage (V) | 5 |
| Memory Density (Kb) | 8192 |
| Pin/Package | 36DIP MODULE |
| Approx. 1KU Price (US$) | 26 |
| Status | ACTIVE |
| Budget Price ($US) | QTY | 26.00 | 1KU |
| Package Type | Pins | DIP MODULE (MC) | 36 |
| STD Pack QTY | 1 |
| Products related to BQ4016YMC-70 |
| BQ4016MC-70 BQ4016 BQ4016Y |