SN74ALVTH16373VR

SN74ALVTH16373VR Description

SN74ALVTH16373VR Description

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SN74ALVTH16373VR Datasheet (PDF)

SN74ALVTH16373VR Price & Availability

SN74ALVTH16373VR Features

• State-of-the-Art Advanced BiCMOS Technology (ABT) Widebus^TM Design for 2.5-V and 3.3-V Operation and Low Static Power Dissipation
• Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 2.3-V to 3.6-V V_CC)
• Typical V_OLP (Output Ground Bounce) < 0.8 V at V_CC = 3.3 V, T_A = 25°C
• High Drive (-24/24 mA at 2.5-V and -32/64 mA at 3.3-V V_CC)
• Power Off Disables Outputs, Permitting Live Insertion
• High-Impedance State During Power Up and Power Down Prevents Driver Conflict
• Uses Bus Hold on Data Inputs in Place of External Pullup/Pulldown Resistors to Prevent the Bus From Floating
• Auto3-State Eliminates Bus Current Loading When Output Exceeds V_CC + 0.5 V
• Latch-Up Performance Exceeds 250 mA Per JESD 17
• ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model; and Exceeds 1000 V Using Charged-Device Model, Robotic Method
• Flow-Through Architecture Facilitates Printed Circuit Board Layout
• Distributed V_CC and GND Pin Configuration Minimizes High-Speed Switching Noise
• Package Options Include Plastic Shrink Small-Outline (DL), Thin Shrink Small-Outline (DGG), Thin Very Small-Outline (DGV) Packages, and 380-mil Fine-Pitch Ceramic Flat (WD) Package

SN74ALVTH16373VR Parameters

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