TS3L100DGVR

TS3L100DGVR Description

TS3L100DGVR Description

TS3L100DGVR Description

TS3L100DGVR Categories

TS3L100DGVR Manufacturer

TS3L100DGVR Datasheet (PDF)

TS3L100DGVR Price & Availability

TS3L100DGVR Features

• Wide Bandwidth (BW = 350 MHz Min)
• Low Differential Crosstalk (X_TALK = -68 dB Typ)
• Low Power Consumption (I_CC = 10 µA Max)
• Bidirectional Data Flow, With Near-Zero Propagation Delay
• Low ON-State Resistance (r_on = 5 Typ)
• Rail-to-Rail Switching on Data I/O Ports (0 to V_CC)
• V_CC Operating Range From 3 V to 3.6 V
• I_off Supports Partial-Power-Down Mode Operation
• Data and Control Inputs Have Undershoot Clamp Diodes
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Suitable for Both 10 Base-T/100 Base-T Signaling

TS3L100DGVR Parameters

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