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TS3L110DGVR Datasheet (PDF)
TS3L110DGVR Price & Availability
TS3L110DGVR Features- Wide Bandwidth (BW = 500 MHz Typ)
- Low Crosstalk (XTALK = -30 dB Typ)
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low and Flat ON-State Resistance (ron = 4 Typ, ron(flat) = 1 )
- Switching on Data I/O Ports (0 to 5 V)
- VCC Operating Range From 3 V to 3.6 V
- Ioff Supports Partial-Power-Down Mode Operation
- Data and Control Inputs Have Undershoot Clamp Diodes
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Suitable for Both 10 Base-T/100 Base-T Signaling
TS3L110DGVR Parameters
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