TS3L110RGYR DescriptionTS3L110RGYR DescriptionTS3L110RGYR DescriptionTS3L110RGYR CategoriesTS3L110RGYR Manufacturer
TS3L110RGYR Datasheet (PDF)
TS3L110RGYR Price & Availability
TS3L110RGYR Features- Wide Bandwidth (BW = 500 MHz Typ)
- Low Crosstalk (XTALK = -30 dB Typ)
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low and Flat ON-State Resistance (ron = 4 Typ, ron(flat) = 1 )
- Switching on Data I/O Ports (0 to 5 V)
- VCC Operating Range From 3 V to 3.6 V
- Ioff Supports Partial-Power-Down Mode Operation
- Data and Control Inputs Have Undershoot Clamp Diodes
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Suitable for Both 10 Base-T/100 Base-T Signaling
TS3L110RGYR Parameters
Products Similar to TS3L110RGYR
Other Components
593D156X9025C2TE3
MSP430G2252IRSA16R
IPB77N06S2-12
MCC11B821K3AS6L-RH
KAL 10 50 1% B
Keywords
| TS3L110RGYR Data Sheet |
TS3L110RGYR Spec |
TS3L110RGYR Application Notes |
TS3L110RGYR Distributor |
| TS3L110RGYR Circuit |
TS3L110RGYR Reference |
TS3L110RGYR PDF |
TS3L110RGYR RoHS |
|