TS5A23157DGST DescriptionTS5A23157DGST DescriptionTS5A23157DGST DescriptionTS5A23157DGST DescriptionTS5A23157DGST CategoriesTS5A23157DGST Manufacturer
TS5A23157DGST Datasheet (PDF)
TS5A23157DGST Price & Availability
TS5A23157DGST Features- Specified Break-Before-Make Switching
- Low ON-State Resistance (10 )
- Control Inputs Are 5-V Tolerant
- Low Charge Injection
- Excellent ON-Resistance Matching
- Low Total Harmonic Distortion
- 1.8-V to 5.5-V Single-Supply Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- APPLICATIONS
- Sample-and-Hold Circuit
- Battery-Powered Equipments
- Audio and Video Signal Routing
- Communication Circuits
TS5A23157DGST Parameters
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