TS5L100DBQR

TS5L100DBQR Description

TS5L100DBQR Description

TS5L100DBQR Description

TS5L100DBQR Categories

TS5L100DBQR Manufacturer

TS5L100DBQR Datasheet (PDF)

TS5L100DBQR Price & Availability

TS5L100DBQR Features

• Wide Bandwidth (BW = 300 MHz Min)
• Low Differential Crosstalk (X_TALK = -60 dB Typ)
• Low Power Consumption (I_CC = 3 µA Max)
• Bidirectional Data Flow, With Near-Zero Propagation Delay
• Low ON-State Resistance (r_on = 3 Typ)
• V_CC Operating Range From 6 V to 6.5 V
• I_off Supports Partial-Power-Down Mode Operation
• Data and Control Inputs Provide Undershoot Clamp Diode
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Suitable for Both 10 Base-T/100 Base-T Signaling

TS5L100DBQR Parameters

Products Similar to TS5L100DBQR