TS5V330DBQR

TS5V330DBQR Description

TS5V330DBQR Description

TS5V330DBQR Description

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TS5V330DBQR Datasheet (PDF)

TS5V330DBQR Price & Availability

TS5V330DBQR Features

• Low Differential Gain and Phase (D_G = 0.64%, D_P = 0.1 Degrees Typ)
• Wide Bandwidth (BW = 300 MHz Min)
• Low Crosstalk (X_TALK = -63 dB Typ)
• Low Power Consumption (I_CC = 3 µA Max)
• Bidirectional Data Flow, With Near-Zero Propagation Delay
• Low ON-State Resistance (r_on = 3 Typ)
• V_CC Operating Range From 4.5 V to 5.5 V
• I_off Supports Partial-Power-Down Mode Operation
• Data and Control Inputs Provide Undershoot Clamp Diode
• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Suitable for Both RGB and Composite-Video Switching

TS5V330DBQR Parameters

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