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3SK195

3SK195 Manufacturer

Toshiba

3SK195 Description

RF Dual Gate FETs

3SK195 Description

High-frequency MOSFET

3SK195 Datasheet (PDF)

3SK195 Datasheet
Datasheet(English)
Datasheet(Japanese)

3SK195 Price & Availability


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3SK195 Parameters

PackageSMQ
PackageSMQ (2.9 x 2.9)
PolarityNch
ApplicationFM RF, Mixer
ID (mA)30
PD (mW)150
IDSS (mA)0 to 0.1
VDS VGDS (VGDO) (V)13.5
Yfs(Typ.) @1kHz (mS)13
GRS(GCS*)/NF(NFCS*) (Typ.) (dB/dB)27/1.1
Number of Pins4
Surface Mount TypeY
Application ScopeTV VHF High-frequency amp
RoHS Compatible Product(s) (#)Available
Drain Current IDSS, max0.1 mA
Drain-Source Voltage VDSS13.5 V
Drain Current ID30 mA
Drain Power Dissipation PD150 mW
Forward Transfer Admittance |Yfs|, typ13 mS
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