3SK260
3SK260 Description
RF Dual Gate FETs
3SK260 Vendor
Toshiba
ParameterValue
VDS VGDS (VGDO) (V)15
ID (mA)30
PD (mW)100
IDSS (mA)3 to 14
Yfs(Typ.) @1kHz (mS)27
GRS(GCS*)/NF(NFCS*) (Typ.) (dB/dB)24.5°/3.3°
PackageUSQ
ApplicationFM RF, Mixer

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