Home
Index
All
Equipment
3SK260
3SK260 Description
RF Dual Gate FETs
3SK260 Vendor
Toshiba
Parameter
Value
V
DS
V
GDS
(V
GDO
) (V)
15
I
D
(mA)
30
P
D
(mW)
100
I
DSS
(mA)
3 to 14
Y
fs
(Typ.) @1kHz (mS)
27
G
RS
(G
CS
*)/NF(NF
CS
*) (Typ.) (dB/dB)
24.5°/3.3°
Package
USQ
Application
FM RF, Mixer
ChipCatalog.com - Your Source of Information About Electronic Components