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3SK283
3SK283 Description
RF Dual Gate FETs
3SK283 Vendor
Toshiba
ParameterValue
VDS VGDS (VGDO) (V)(-6)
ID (mA)20
PD (mW)150
IDSS (mA)4 to 16
Yfs(Typ.) @1kHz (mS)12
GRS(GCS*)/NF(NFCS*) (Typ.) (dB/dB)18.5/1.3
PackageSMQ
ApplicationFM RF, Mixer

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