3SK291
3SK291 Description
RF Dual Gate FETs
3SK291 Vendor
Toshiba
ParameterValue
VDS VGDS (VGDO) (V)12.5
ID (mA)30
PD (mW)150
IDSS (mA)0 to 0.1
Yfs(Typ.) @1kHz (mS)27
GRS(GCS*)/NF(NFCS*) (Typ.) (dB/dB)23/1.5
PackageSMQ
ApplicationFM RF, Mixer
PackageSMQ
ApplicationUHF RF/Mixer

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