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3SK291

3SK291 Manufacturer

Toshiba

3SK291 Description

RF Dual Gate FETs

3SK291 Description

High-frequency MOSFET

3SK291 Datasheet (PDF)

Datasheet (English)  ( PDF : 335 KB)
Datasheet (Japanese)  ( PDF : 229 KB)

3SK291 Price & Availability


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3SK291 Parameters

PackageSMQ
PackageSMQ(2.9 x 2.9)
PolarityNch
ApplicationFM RF, Mixer
ApplicationUHF RF/Mixer
ID (mA)30
PD (mW)150
IDSS (mA)0 to 0.1
VDS VGDS (VGDO) (V)12.5
Yfs(Typ.) @1kHz (mS)27
GRS(GCS*)/NF(NFCS*) (Typ.) (dB/dB)23/1.5
Number of Pins4
Surface Mount TypeY
Application ScopeTV UHF High-frequency amp
RoHS Compatible Product(s) (#)Available
Drain Current IDSS, max0.1 mA
Drain-Source Voltage VDSS12.5 V
Drain Current ID30 mA
Drain Power Dissipation PD150 mW
Forward Transfer Admittance |Yfs|, typ26 mS
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