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3SK292
3SK292 Manufacturer
Toshiba
3SK292 Description
RF Dual Gate FETs
3SK292 Description
High-frequency MOSFET
3SK292 Datasheet (PDF)
Datasheet (English) ( PDF : 294 KB)
Datasheet (Japanese) ( PDF : 226 KB)
3SK292 Price & Availability
Check 3SK292 Price & Availability at Canics
3SK292 Parameters
Package
SMQ
Package
SMQ(2.9 x 2.9)
Polarity
Nch
Application
FM RF, Mixer
Application
VHF RF/Mixer
I
D
(mA)
30
P
D
(mW)
150
I
DSS
(mA)
0 to 0.1
V
DS
V
GDS
(V
GDO
) (V)
12.5
Y
fs
(Typ.) @1kHz (mS)
23.5
G
RS
(G
CS
*)/NF(NF
CS
*) (Typ.) (dB/dB)
21.5/1.8
Number of Pins
4
Surface Mount Type
Y
Application Scope
TV VHF/UHF High-frequency amp
RoHS Compatible Product(s) (#)
Available
Drain Current I
DSS
, max
0.1 mA
Drain-Source Voltage V
DSS
12.5 V
Drain Current I
D
30 mA
Drain Power Dissipation P
D
150 mW
Forward Transfer Admittance |Y
fs
|, typ
23.5 mS
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Keywords
3SK292 Data Sheet
3SK292 Spec
3SK292 Application Notes
3SK292 Distributor
3SK292 Circuit
3SK292 Reference
3SK292 PDF
3SK292 RoHS